Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
article | Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu | High Thermoelectric Power Factor of High-Mobility 2D Electron Gas | - | Advanced Science | - | Jan-2018 |
article (author version) | Sato, Taketomo; Yoshizawa, Naoki; Hashizume, Tamotsu | Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells | - | Thin Solid Films | - | 31-May-2010 |
article | Sato, Taketomo; Mizohata, Akinori; Hashizume, Tamotsu | Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors | - | Journal of The Electrochemical Society | - | 2010 |
article | Sato, Taketomo; Yoshizawa, Naoki; Okazaki, Hiroyuki; Hashizume, Tamotsu | Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching | - | ECS Transactions | - | 2010 |
article (author version) | Yoshizawa, Naoki; Sato, Taketomo; Hashizume, Tamotsu | Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors | - | Japanese Journal of Applied Physics | - | Sep-2009 |
article (author version) | Zhao, Hong-Quan; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu | A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology | BDD-based 2-bit Arithmetic Logic Unit on GaAs-based Regular Nanowire Network with Hexagonal Topology | Nanotechnology | - | 17-Jun-2009 |
article | Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, Tamotsu | Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 26-Jul-2006 |
article | Kokawa, Takuya; Sato, Taketomo; Hasegawa, Hideki; Hashizume, Tamotsu | Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 25-Jul-2006 |
article (author version) | Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu | Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits | - | Journal of Physics: Conference Series | - | 2006 |
bulletin (article) | 橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機 | MOCVD成長によるアンドープGaAs中の電子トラップ | Deep Electron Traps in Undoped GaAs Grown by MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1984 |