Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/20209

Title:	Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions
Authors:	Sato, Taketomo Browse this author →KAKEN DB
	Fujino, Toshiyuki Browse this author
	Hashizume, Tamotsu Browse this author →KAKEN DB
Keywords:	nanostructured materials
	dissociation
	indium compounds
	III-V semiconductors
	etching
	crystal orientation
	electrodeposition
	semiconductor growth
Issue Date:	2007
Publisher:	The Electrochemical Society
Journal Title:	Electrochemical and Solid-State Letters
Volume:	10
Issue:	5
Start Page:	H153
End Page:	H155
Publisher DOI:	10.1149/1.2713662
Abstract:	A two-step electrochemical process using anodic and cathodic reactions was developed to form size-controlled nanostructures on InP(001) substrates. After anodic formation of a nanopore array, the cathodic decomposition process was applied to reduce the thickness of InP nanowalls. The etching rate of the nanowalls was extremely small and strongly dependent on the cathodic bias and crystal orientations of the wall surface. Wall thickness could be controlled in the range of 10–30 nm by changing the cathodic bias and processing time.
Relation:	http://www.electrochem.org/
Type:	article
URI:	http://hdl.handle.net/2115/20209
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤威友

OAI-PMH ( junii2 , jpcoar_1.0 )

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