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Atomic imaging of an InSe single-crystal surface with atomic force microscope
Title: | Atomic imaging of an InSe single-crystal surface with atomic force microscope |
Authors: | Uosaki, Kohei Browse this author | Koinuma, Michio Browse this author |
Issue Date: | 1-Aug-1993 |
Publisher: | American Institute of Physics |
Journal Title: | Journal of Applied Physics |
Volume: | 74 |
Issue: | 3 |
Start Page: | 1675 |
End Page: | 1678 |
Publisher DOI: | 10.1063/1.354820 |
Abstract: | The atomic force microscope was employed to observed in air the surface atomic structure of InSe, one of III-VI compound semiconductors with layered structures. Atomic arrangements were observed in both n-type and p-type materials. The observed structures are in good agreement with those expected from bulk crystal structures. The atomic images became less clear by repeating the imaging process. Wide area imaging after the imaging of small area clearly showed that a mound was created at the spot previously imaged. Journal of Applied Physics is copyrighted by The American Institute of Physics. |
Rights: | Copyright © 1993 American Institute of Physics |
Type: | article |
URI: | http://hdl.handle.net/2115/20579 |
Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 魚崎 浩平
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