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Influence of annealing on spin-dependent tunneling characteristics of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions

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Title: Influence of annealing on spin-dependent tunneling characteristics of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions
Authors: Taira, Tomoyuki Browse this author
Ishikawa, Takayuki Browse this author
Itabashi, Naoki Browse this author
Matsuda, Ken-ichi Browse this author
Uemura, Tetsuya Browse this author
Yamamoto, Masafumi Browse this author →KAKEN DB
Issue Date: 20-Feb-2009
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 94
Issue: 7
Start Page: 072510
Publisher DOI: 10.1063/1.3083559
Abstract: We found that the tunnel magnetoresistance ratio of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions (MTJs) increased discontinuously and significantly from 92% at room temperature (RT) (244% at 4.2 K) for Ta of 475 °C to 160% at RT (376% at 4.2 K) for Ta of 500 °C, where Ta is the temperature at which the MTJ trilayer was in situ annealed right after deposition of the upper electrode. We also found that the dI/dV versus V characteristics for the parallel and antiparallel magnetization configurations changed discontinuously and markedly with increasing Ta from 475 °C or less to 500 °C or higher. These significant changes are discussed in terms of a possible change in the spin-dependent interfacial density of states.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 94, 072510 and may be found at https://dx.doi.org/10.1063/1.3083559
Type: article
URI: http://hdl.handle.net/2115/50602
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本 眞史

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