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Characterization of electronic structure around metal-insulator transition in V1-x WxO2 thin films by thermopower measurement
| Title: | Characterization of electronic structure around metal-insulator transition in V1-x WxO2 thin films by thermopower measurement |
| Authors: | Katase, Takayoshi Browse this author | | Endo, Kenji Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | Vanadium dioxide | | Thermopower | | Metal-insulator transition | | Electronic structure |
| Issue Date: | May-2015 |
| Publisher: | The Ceramic Society of Japan |
| Journal Title: | Journal of the Ceramic Society of Japan |
| Volume: | 123 |
| Issue: | 1437 |
| Start Page: | 307 |
| End Page: | 311 |
| Publisher DOI: | 10.2109/jcersj2.123.307 |
| Abstract: | Electronic structure across the metal-insulator (MI) transition of electron-doped V1-x WxO2 epitaxial films (x = 0-0.06) grown on alpha-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of vertical bar S vertical bar-values accompanied by MI transition was observed, and the transition temperatures of S (T-S) decreased with x in good linear relation with MI transition temperatures. vertical bar S vertical bar values of V1-x WxO2 films at T > T-S were constant at low values of 23 mu VK-1 independently of x, which reflects a metallic electronic structure, whereas, those at T < T-S almost linearly decreased with logarithmic W-concentrations. The gradient of -213 mu VK-1 agrees well with -k(B)/e.ln10 (-198 mu VK-1), suggesting that V1-x WxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom. |
| Rights: | ©2015 The Ceramic Society of Japan. All rights reserved. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/59324 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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