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An investigation of surface contamination introduced during He plus implantation and subsequent effects on the thermal oxidation of Cu

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Title: An investigation of surface contamination introduced during He plus implantation and subsequent effects on the thermal oxidation of Cu
Authors: Yang, Subing Browse this author
Nakagawa, Yuki Browse this author
Shibayama, Tamaki Browse this author →KAKEN DB
Keywords: Copper
Oxidation
Implantation
Microstructure
Issue Date: Mar-2022
Publisher: Elsevier
Journal Title: Applied surface science
Volume: 579
Start Page: 152163
Publisher DOI: 10.1016/j.apsusc.2021.152163
Abstract: Ion implantation is a potential means of increasing the oxidation resistance of Cu. However, carbonaceous contamination can also be introduced onto the metal surface during this process as a consequence of pump oil within the vacuum system. This can complicate analysis of the effect of ion implantation on Cu oxidation. The present study examined the surface contamination introduced during He+ implantation. Carbonaceous contamination was indeed identified on the Cu surface and had an obvious passivation effect on Cu oxidation at 200 °C. This was ascribed to the implantation of C into the Cu to a depth of several nanometers in conjunction with He+ implantation. The Cu was protected from oxidation by the formation of a layer consisting of C, Cu and a small amount of Cu2O that inhibited the inward diffusion of oxygen.
Rights: © <2022>. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
http://creativecommons.org/licenses/by-nc-nd/4.0/
Type: article (author version)
URI: http://hdl.handle.net/2115/90881
Appears in Collections:エネルギー・マテリアル融合領域研究センター (Center for Advanced Research of Energy and Material) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 柴山 環樹

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