2024-03-29T04:45:05Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/146752022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Gate-controlled electron g factor in an InAs-inserted-channel In 0.53Ga 0.47As/In 0.52Al 0.48As heterostructureNitta, JunsakuLin, YipingAkazaki, Tatsushi1000030374614Koga, Takaakiopen accessCopyright © 2003 American Institute of Physics428The electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure is studied by measuring the angle dependence of magnetotransport properties. The gate voltage dependence of the g factor is obtained from the coincidence method. The g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and close to the bare g-factor value of In0.53Ga0.47As. A large change in the g factor is observed by applying the gate voltage. The gate voltage dependence is not simply explained by the energy dependence of the g factor. ©2003 American Institute of Physics.American Institute of Physics2003engjournal articleVoRhttp://hdl.handle.net/2115/14675http://apl.aip.org/apl/top.jsphttps://doi.org/10.1063/1.16310820003-69510003-6951Applied Physics Letters832245654567https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/14675/1/APL83-22.pdfapplication/pdf299.6 KB2003