2024-03-28T21:23:16Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/225312022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156High quality Fe3-δO4/InAs hybrid structure for electrical spin injectionFerhat, Marhoun1000060220539Yoh, Kanjiopen accessCopyright © 2007 American Institute of Physics549.8Single crystalline Fe3−O4 (00.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions, in situ real time reflection high-energy electron diffraction patterns, along with ex situ atomic force microscopy, indicate that (001) Fe3−O4 can be grown under step-flow-growth mode with a characteristic (×)R45 surface reconstruction. X-ray photoelectron spectroscopy demonstrates the possibility of obtaining iron oxides with compositions ranging from Fe3O4 to -Fe2O3. Measurements with a superconducting quantum interference device magnetometer at 300 K show good magnetic properties, suggesting that iron-based oxides may be promising for spintronic applications. ©2007 American Institute of PhysicsAmerican Institute of Physics2007-03-12engjournal articleVoRhttp://hdl.handle.net/2115/22531http://apl.aip.org/apl/https://doi.org/10.1063/1.27137840003-69510003-6951Applied Physics Letters9011112501https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/22531/1/APL90-11.pdfapplication/pdf183.01 KB2007-03-12