2024-03-29T13:54:03Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/297512022-11-17T02:08:08Zhdl_2115_20039hdl_2115_116Electronic structure of octane on Cu(111) and Ni(111) studied by near edge X-ray absorption fine structureKiguchi, ManabuEntani, ShiroIkeda, SusumuYoshikawa, GenkiNakai, IkuyoKondoh, HiroshiOhta, ToshiakiSaiki, Koichiroopen accessNear edge extended X-ray absorption fine structureSurface electronic phenomenaAlkanesCopperNickel431.7The electronic structure of an octane film grown on Cu(1 1 1) and Ni(1 1 1) was studied using C K-edge near edge X-ray absorption fine structure (NEXAFS). A pre-peak was observed on the bulk edge onset for the 1 ML thick octane films on the metal substrates. The pre-peak originated from metal induced gap states (MIGS) in the band gap of octane. The intensity of the pre-peak for octane/Ni(1 1 1) was the same as that of octane/Cu(1 1 1), suggesting that there was little difference in the density of unoccupied MIGS between the octane film on Ni(1 1 1) and Cu(1 1 1). We discuss the metal dependence of the density of unoccupied MIGS on the band structure of the metals.Elsevier B.V.2007-09-15engjournal articleAMhttp://hdl.handle.net/2115/29751http://www.sciencedirect.com/science/journal/00396028https://doi.org/10.1016/j.susc.2007.04.0550039-60280039-6028Surface Science6011840744077https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/29751/1/SS601-18.pdfapplication/pdf379.11 KB2007-09-15