2024-03-29T05:56:48Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/330932022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and DotsHirano, TetsuroIto, Akira1000050343009Sato, TaketomoIshikawa, FumitaroHasegawa, Hidekiopen accessCopyright © 2002 The Japan Society of Applied Physicsnanoporetemplateporous InPInGaAsMBE growthPLelectrochemical anodization549Attempts were made to optimize the parameters of the electrochemical process to form uniform nanopore arrays and utilize them as templates for molecular beam epitaxy (MBE) growth of InP-based quantum wires and quantum dots. Template parameters such as pore depth, diameter and period were strongly dependent on anodization conditions. In particular, in the pulsed anodization mode, the pore depth could be well controlled in the nanometer range by adjusting the number of the applied pulses. InGaAs MBE growth was attempted using the nanopore templates. Growth of InGaAs in pores occurred at a substantial depth of about 20-60 nm. The measured photoluminescence (PL) spectra had a new peak at about 1.2 eV in addition to the PL emission from the InP substrate and that from the InGaAs top layer. The new peak was tentatively assigned to the peak arising from InGaAs quantum wire arrays embedded in InP pores with a possible alloy composition change.Japan Society of Applied Physics2002-02engjournal articleAMhttp://hdl.handle.net/2115/33093https://doi.org/10.1143/JJAP.41.9770021-4922AA10457675Japanese Journal of Applied Physics part 1, Regular papers & short notes412977981https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/33093/1/JJAP1~41-2B.pdfapplication/pdf1.57 MB2002-02