2024-03-28T21:27:14Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/386692022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks1000030312383Kasai, Seiya1000000312380Asai, Tetsuyaopen access© 2008 The Japan Society of Applied Physics549Investigation of stochastic resonance in GaAs-based nanowire field-effect transistors (FETs) controlled by Schottky wrap gate and their networks is described. When a weak pulse train is given to the gate of the FET operating in a subthreshold region, the correlation between the input-pulse and source-drain current increases by adding input noise. Enhancement of the correlation is observed in a summing network of the FETs. Measured correlation coefficient of the present system can be larger than that in a linear system in the wide range of noise. An analytical model based on the electron motion over a gate-induced potential barrier quantitatively explains the experimental behaviors.Japan Society of Applied Physics2008-08-25engjournal articleAMhttp://hdl.handle.net/2115/38669https://doi.org/10.1143/APEX.1.0830011882-07781882-0786AA12295133Applied Physics Express18083001https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/38669/2/APEX080318.pdfapplication/pdf351.95 KB2008-08-25