2024-03-29T13:37:37Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/414522019-03-18T09:51:42Zhdl_2115_40318hdl_2115_40231hdl_2115_139層状半導体InSeの結晶成長とその電気的及び光学的性質The Crystal Glowth of Layered Semiconductor InSe and its Electrical and Optical Properties今井, 和明Imai, Kazuaki長谷川, 好道Hasegawa, Yoshimichi阿部, 寛Abe, Yutakaopen access500北海道大学Hokkaido University1978-02-03jpndepartmental bulletin paperVoRhttp://hdl.handle.net/2115/414520385-602XAN00230223北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University86113122https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/41452/1/86_113-122.pdfapplication/pdf1007.3 KB1978-02-03