2024-03-29T02:01:57Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/420582019-03-18T10:02:36Zhdl_2115_40369hdl_2115_40231hdl_2115_139半絶縁性GaAs基板の絶縁破壊機構に関する検討Investigation of Breakdown Mechanism of Semi-Insulating GaAs劉, 亜莉Liu, Yali長谷川, 英機Hasegawa, Hideki大野, 英男Ohno, Hideoopen access500北海道大学Hokkaido University1987-10-31jpndepartmental bulletin paperVoRhttp://hdl.handle.net/2115/420580385-602XAN00230223北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University1376571https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/42058/1/137_65-72.pdfapplication/pdf389.33 KB1987-10-31