2024-03-29T08:45:51Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/422262019-03-18T10:02:38Zhdl_2115_40382hdl_2115_40231hdl_2115_139MOVPE法によるInAsの原子層エピタキシと成長機構Atomic Layer Epitaxy of InAs by MOVPE and Growth Mechanism松原, 義徳Matsubara, Yoshinori後藤, 修Goto, Shu大塚, 俊介Ohtsuka, Shunsuke長谷川, 英機Hasegawa, Hideki大野, 英男Ohno, Hideoopen access500北海道大学Hokkaido University1990-05-31jpndepartmental bulletin paperVoRhttp://hdl.handle.net/2115/422260385-602XAN00230223北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University1508189https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/42226/1/150_81-90.pdfapplication/pdf531.97 KB1990-05-31