2023-10-05T02:00:08Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/450392022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Determination of spin-orbit coefficients in semiconductor quantum wellsFaniel, S.Matsuura, T.Mineshige, S.Sekine, Y.Koga, T.open access©2011 American Physical Society421We report the determination of the intrinsic spin-orbit interaction (SOI) parameters for In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) from the analysis of the weak antilocalization effect. We show that the Dresselhaus SOI is mostly negligible in this system and that the intrinsic parameter for the Rashba effect, a_[SO] ≣ 1 α/< Ez >, is given to be a_[SO]m*/m_[e] = (1.46-1.51 x 10^[-17] N_[S] [m^[-2]]) e Å^[2], where α is the Rashba SOI coefficient, < Ez > is the expected electric field within the QW, m*/m_[e] is the electron effective mass ratio, and N_[S] is the sheet carrier density. These values for a_[SO]m* were also confirmed by the observation of beatings in the Shubnikov-de Haas oscillations in our most asymmetric QW sample.American Physical Society2011-03-15engjournal articleVoRhttp://hdl.handle.net/2115/45039https://doi.org/10.1103/PhysRevB.83.1153091098-0121Physical Review B8311115309https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/45039/1/PRB83-11_115309.pdfapplication/pdf697.26 KB2011-03-15