2024-03-28T12:12:25Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/457702022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Carrier pocket engineering to design superior thermoelectric materials using GaAs/AlAs superlatticesKoga, T.Sun, X.Cronin, S. B.Dresselhaus, M. S.open accessCopyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 73, 2950 (1998) and may be found at https://dx.doi.org/10.1063/1.122640Gallium arsenideAluminium compoundsIII-V semiconductorsSemiconductor superlatticesSemiconductor quantum wellsCarrier densityThermoelectricitySeebeck effectBrillouin zones420A large enhancement in the thermoelectric figure of merit for the whole superlattice, Z3DT, is predicted for short-period GaAs/AlAs superlattices relative to bulk GaAs. Various superlattice parameters (superlattice growth direction, superlattice period, and layer thicknesses) are explored to optimize Z3DT, including quantum well states formed from carrier pockets at various high symmetry points in the Brillouin zone. The highest room-temperature Z3DT obtained in the present calculation is 0.41 at the optimum carrier concentration for either (001)- or (111)-oriented GaAs (20 Å)/AlAs (20 Å) superlattices, which is about 50 times greater than the corresponding ZT for bulk GaAs. © 1998 American Institute of Physics.American Institute of Physics1998-11-16engjournal articleVoRhttp://hdl.handle.net/2115/45770https://doi.org/10.1063/1.1226400003-69511077-3118AA00543431Applied Physics Letters732029502952https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/45770/1/APL73_2950.pdfapplication/pdf74.63 KB1998-11-16