2024-03-29T02:34:40Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/471332022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions1000020344476Uemura, TetsuyaAkiho, TakafumiHarada, MasanobuMatsuda, Ken-ichiYamamoto, Masafumiopen accessCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 99, 082108 (2011) and may be found at https://dx.doi.org/10.1063/1.3630032cobalt alloysgallium arsenideHanle effectIII-V semiconductorsiron alloysSchottky barrierssemiconductor-metal boundariesspin polarised transportspin valves427A clear spin-valve signal and a Hanle signal were observed in a Co50Fe50/n-GaAs Schottky tunnel junction through a four-terminal non-local geometry. The sign and magnitude of the spin-valve signal were strongly dependent on the bias current, suggesting that the spin polarization at the Co50Fe50/n-GaAs interface had strong energy dependence. A clear spin-valve signal was observed at temperatures up to 290 K. The magnitude of the spin-valve signal monotonically decreased by a factor of 7.9 as the temperature increased from 10 K to 290 K; this factor was significantly smaller than the factors reported for Fe/n-GaAs junctions which range from 35 to 80.American Institute of Physics2011-08-22engjournal articleVoRhttp://hdl.handle.net/2115/47133https://doi.org/10.1063/1.36300320003-6951Applied Physics Letters998082108https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/47133/1/APL99-8_082108.pdfapplication/pdf452.5 KB2011-08-22