2024-03-29T15:52:08Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/502552022-11-17T02:08:08Zhdl_2115_20039hdl_2115_116Electrochemical Deposition, Optical Properties, and Photoelectrochemical Behavior of CdTe FilmsTakahashi, Makoto1000020133697Uosaki, KoheiKita, Hideakiopen access© The Electrochemical Society, Inc. 1984. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 1984 volume 131, issue 10, 2304-2307.electrodepositionsemiconductor thin filmscadmium alloystellurium alloyshydrogenelectron-hole recombinationgrain boundariesheat treatmentetchingelectric currentelectric potentialphotoelectrochemistry431Electrochemical deposition of cadmium telluride from acidic solutions containing CdSO4 and TeO2 is studied and the current-potential expression for this reaction is presented. The electrochemically deposited CdTe films are photoactive, and the maximum cathodic photocurrent due to hydrogen evolution is observed at CdTe films deposited at -0.40V. The photocurrents of the as-grown CdTe films are relatively small compared with those of CdTe single crystals. The major reason for this low efficiency is the effective recombination of hole-electron pairs at grain boundaries and at the surface. The photocurrents are increased significantly by the increase of crystallite diameter by the heat-treatment in a He atmosphere and by the removal of surface Te, which acts as a recombination center, by the etching treatment.The Electrochemical Society1984engjournal articleVoRhttp://hdl.handle.net/2115/50255https://doi.org/10.1149/1.21152450013-4651Journal of The Electrochemical Society1311023042307https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/50255/1/JES131-10_2304-2307.pdfapplication/pdf447.76 KB1984