2024-03-29T06:22:07Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/504042022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage methodYoshida, Toshiyuki1000080149898Hashizume, Tamotsuopen accessCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 122102 (2012) and may be found at https://dx.doi.org/10.1063/1.4753927air gapsaluminaannealingatomic layer depositioncapacitanceelectronic density of statesgallium arsenideIII-V semiconductorsindium compoundsinterface statesoxidationsemiconductor-insulator boundaries427The air-gap capacitance-voltage characteristics of InGaAs surfaces were measured after 1-, 2-, 6-, 9-, and 17-cycle atomic layer deposition (ALD) Al2O3 processing. A high density of mid-gap states was found to be generated and increased during these ALD process steps, while the native oxide component was reduced. On the other hand, the mid-gap state density was drastically reduced after the usual annealing process. The generation of the mid-gap states seemed to be relevant to a non-stoichiometric Al-oxide component associated with a deficit in oxygen atoms, which became re-oxidized during the annealing process.American Institute of Physics2012-09-17engjournal articleVoRhttp://hdl.handle.net/2115/50404https://doi.org/10.1063/1.47539270003-6951Applied Physics Letters10112122102https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/50404/1/APL101-12_122102.pdfapplication/pdf1.23 MB2012-09-17