2024-03-28T20:13:54Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/506072022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin filmMarukame, TakaoIshikawa, Takayuki1000080360931Matsuda, Ken-Ichi1000020344476Uemura, Tetsuya1000010322835Yamamoto, Masafumiopen accessCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 88, 262503 and may be found at https://dx.doi.org/10.1063/1.2217166427Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film, whose composition was close to the stoichiometric one, and a MgO tunnel barrier. Cross-sectional high-resolution transmission electron microscope observations indicated that all layers of the CCFA/MgO/Co50Fe50 MTJ layer structure were grown epitaxially and were single crystalline. The microfabricated CCFA/MgO/Co50Fe50 MTJs exhibited high tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios.American Institute of Physics2006-06-28engjournal articleVoRhttp://hdl.handle.net/2115/50607https://doi.org/10.1063/1.22171660003-6951Applied Physics Letters8826262503https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/50607/3/APL88_262503.pdfapplication/pdf102.2 KB2006-06-28