2024-03-28T13:30:50Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/506222022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Electronic and magnetic properties of Heusler alloy Co2MnSi epitaxial ultrathin films facing a MgO barrier studied by x-ray magnetic circular dichroismSaito, ToshiakiKatayama, ToshikazuEmura, AiSumida, NoaMatsuoka, NanaeIshikawa, Takayuki1000020344476Uemura, Tetsuya1000010322835Yamamoto, MasafumiAsakura, DaisukeKoide, Tsuneharuopen accessCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 103, 07D712 (2008) and may be found at https://dx.doi.org/10.1063/1.2836676427The electronic and magnetic states of an epitaxially grown full-Heusler alloy Co2MnSi (CMS) 1.1 nm (4 ML) thick ultrathin film and a CMS 50‐nm-thick film both facing an epitaxial MgO(001) tunnel barrier were element-specifically studied by means of x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The observed XAS and XMCD spectra revealed that both the CMS films were not oxidized. The Co and Mn spin magnetic moments for the 4 ML thick CMS film obtained by applying the sum rules were close to those for the 50‐nm-thick one and the theoretical values for bulk CMS with the L21 structure. These results indicate that 4 ML thick CMS ultrathin films facing a MgO barrier still retain the electronic and magnetic states for the L21 structure.American Institute of Physics2008engjournal articleVoRhttp://hdl.handle.net/2115/50622https://doi.org/10.1063/1.28366760021-8979Journal of Applied Physics103707https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/50622/3/JAP103_07D712.pdfapplication/pdf274.81 KB2008