2024-03-29T00:22:23Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/506232019-05-29T08:10:43Zhdl_2115_20053hdl_2115_145Three-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application1000020344476Uemura, Tetsuya1000010322835Yamamoto, Masafumiopen accessCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 104, 123911 (2008) and may be found at https://dx.doi.org/10.1063/1.3054174427American Institute of Physics2008-12-23engjournal articleVoRhttp://hdl.handle.net/2115/50623https://doi.org/10.1063/1.30541740021-8979Journal of Applied Physics10412123911https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/50623/3/JAP104_123911.pdfapplication/pdf528.38 KB2008-12-23