2024-03-29T12:44:12Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/519042022-11-17T02:08:08Zhdl_2115_20045hdl_2115_139Electric Double Layer Gate Field-Effect Transistors Based on SiYanase, Takashi1000010262148Shimada, ToshihiroHasegawa, Tetsuyaopen access© 2010 The Japan Society of Applied Physics430Electric double layer field-effect transistors (EDL-FETs) were fabricated using single crystal Si wafer as the active semiconductor and various characteristics were studied including dynamic response against step-function gate bias. The static FET mobility was more than 100 cm2 V-1 s-1. The response time of the drain current was 20 µs for ionic liquid and 3 ms for poly(ethylene glycol) (PEG) solution of LiBF4. Unexpected fast response was observed at a certain “speed up bias” condition. This effect will be useful to switching circuits using EDL-FETs.The Japan Society of Applied Physics2010-04engjournal articleAMhttp://hdl.handle.net/2115/51904http://jjap.jsap.jp/link?JJAP/49/04DK06/citehttps://doi.org/10.1143/JJAP.49.04DK060021-49221347-4065AA12295836Japanese Journal of Applied Physics49404https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/51904/1/JJAP-49-04DK06.pdfapplication/pdf435.86 KB2010-04