2024-03-29T05:44:37Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/55042022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxyNataraj, DevarajOoike, Noboru1000060212263Motohisa, Junichi本久, 順一Fukui, Takashiopen accessCopyright © 2005 American Institute of Physics549.8Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot memory device was fabricated in this opened area by the selective-area metal-organic vapor phase epitaxy. Drain current measurement by sweeping the gate voltage forward and backward showed clear hysteresis up to 180 K due to electrons charging into the quantum dots with a threshold voltage difference (△Vth) of 165 mV at 20 K and 29 mV at 180 K. Comparison of experimental △Vth values with the theoretically calculated ones showed that around 300 and 50 electrons were responsible for the memory operation at 20 and 180 K, respectively. Real time measurements showed that the write/erase states of the memory device were discriminated for more than 5 min at 20 K and about 100 s at 77 K.American Institute of Physics2005-11-07engjournal articleVoRhttp://hdl.handle.net/2115/5504https://doi.org/10.1063/1.21209050003-6951Applied Physics Letters8719310https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/5504/3/APL87-19.pdfapplication/pdf131.63 KB2005-11-07