2024-03-29T09:00:47Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/55062022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxyNoborisaka, Jinichiro1000060212263Motohisa, Junichi本久, 順一1000030240641Fukui, Takashiopen accessCopyright © 2005 American Institute of Physics549.8We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 mm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussedAmerican Institute of Physics2005-05-23engjournal articleVoRhttp://hdl.handle.net/2115/5506http://www.aip.org/https://doi.org/10.1063/1.19350380003-6951Applied Physics Letters8621213102https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/5506/1/APL86-21.pdfapplication/pdf334.11 KB2005-05-23