2024-03-28T17:50:37Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/55952022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substratesOikawa, TakeshiIshikawa, Fumitaro1000050343009Sato, Taketomo1000080149898Hashizume, Tamotsu橋詰, 保open access549.8This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0 0 0 1) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along<1120> -<1100> and -directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the <1120>-direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the <1120>-direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified.Elsevier B.V.2005-05-15engjournal articleAMhttp://hdl.handle.net/2115/5595http://www.sciencedirect.com/science/journal/01694332https://doi.org/10.1016/j.apsusc.2004.09.1300169-4332Applied Surface Science2441-48487https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/5595/1/ASS84-87.pdfapplication/pdf135.62 KB2005-05-15