2024-03-28T14:42:02Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/563992022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length1000060519411Tomioka, Katsuhiro1000030240641Fukui, Takashiopen accessCopyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 073507(2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4865921540We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (V-DS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors attained a steep subthreshold slope (< 60 mV/decade) and enhanced the drain current, which was 100 higher than that of the longer channels. (C) 2014 AIP Publishing LLC.American Institute of Physics2014-02-19engjournal articleVoRhttp://hdl.handle.net/2115/56399https://doi.org/10.1063/1.48659210003-6951Applied Physics Letters1047073507https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/56399/1/1.4865921.pdfapplication/pdf1.02 MB2014-02-19