2024-03-28T13:29:21Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/575772022-11-17T02:08:08Zhdl_2115_20045hdl_2115_139Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVDTamura, TakahiroYanase, TakashiNagahama, TaroWakeshima, MakotoHinatsu, Yukio1000010262148Shimada, Toshihiroopen access430We demonstrate a new doping technique for (CVD) growth of diamond. The method involves immersing a solid-state dopant source into the plasma of microwave plasma-assisted CVD. We applied this simple and versatile technique to the growth of boron-doped diamond. The grown films were characterized by X-ray diffraction (XRD), Raman spectroscopy, glow discharge optical emission spectroscopy (GDOES) and electrical conductivity measurement. The average concentration of boron was 0.5 atomic % and the conductivity was 1.5 x 10-2 Ωcm, which showed irregular behavior at low temperature.The Chemical Society of Japan2014-10-05engjournal articleAMhttp://hdl.handle.net/2115/57577https://doi.org/10.1246/cl.1405980366-7022Chemistry Letters431015691571https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/57577/1/tamura1_CL_HUSCAP.pdfapplication/pdf233.11 KB2014-10-05