2024-03-28T09:26:31Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/585462022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination ModeWatanabe, AkioKumazaki, YusukeYatabe, Zenji1000050343009Sato, Taketomoopen access© The Electrochemical Society, Inc. 2015. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Electrochemistry Letters.back-side illuminationGaNporous structure431We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region.Electrochemical Society2015-03-14engjournal articleVoRhttp://hdl.handle.net/2115/58546https://doi.org/10.1149/2.0031505eel2162-87262162-8734ECS Electrochemistry Letters45H11H13https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/58546/1/H11.full.pdfapplication/pdf469.48 KB2015-03-14