2024-03-29T06:19:42Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/603442022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body TheoryFujisawa, Takeshi1000020333627Saitoh, Kunimasaopen access©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Si photonicsGeSn quantum wellselectroabsorption modulatorsquantum-confined Stark effectand many-body theory547Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared (mid-IR) Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, the QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-IR region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.IEEE2015-11engjournal articleSMURhttp://hdl.handle.net/2115/60344https://doi.org/10.1109/JQE.2015.24883630018-9197IEEE journal of quantum electronics51118400207https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/60344/1/fujisawa-JQE-final.pdfapplication/pdf578.9 KB2015-11