2024-03-28T14:04:01Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/645402022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor ApplicationsYoshida, Akinobu1000060519411Tomioka, KatsuhiroIshizaka, FumiyaChiba, Kohei1000060212263Motohisa, Junichiopen access© The Electrochemical Society, Inc. 2016. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 75 (5) 265-270 (2016).540III-V compound semiconductors and Ge are promising future channel materials because of their high carrier mobility. For example the electron mobility of InAs is about 20 times faster than that of Si at room temperature and hole mobility of Ge is about 5 times faster than that of Si. In this paper, we report direct integration of InGaAs nanowires (NWs) on Ge(111) substrate by selective-area metal organic vapor phase epitaxy (SA-MOVPE) for realization of high carrier mobility InGaAs/Ge hybrid CMOS applications, and characterization of the composition and growth modes of InGaAs NWs by X-ray diffraction (XRD) measurement.The Electrochemical Society (ECS)2016-10engjournal articleVoRhttp://hdl.handle.net/2115/64540https://doi.org/10.1149/07505.0265ecst1938-67371938-5862ECS Transactions755265270https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/64540/2/ECS%20Trans.-2016-Yoshida-265-70-SAG%20of%20InGaAs%20on%20Ge.pdfapplication/pdf275.18 KB2016-10