2024-03-29T07:03:01Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/721432022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Effects of postmetallization annealing on interface properties of Al2O3/GaN structures1000080149898Hashizume, TamotsuKaneki, ShotaOyobiki, TatsuyaAndo, YujiSasaki, ShotaNishiguchi, Kenyaopen access©2018 The Japan Society of Applied PhysicsCreative Commons Attribution 4.0 International540In this study, we investigated the effects of postmetallization annealing (PMA) on the interface properties of GaN metal-oxide-semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition. Excellent capacitance-voltage (C-V) characteristics without frequency dispersion were observed in the MOS sample after PMA in N-2 ambient at 300-400 degrees C. The PMA sample showed state densities of only at most 4 x 10(10) cm(-1) eV(-1). A geometric phase analysis of transmission electron microscopy images after PMA revealed a uniform distribution of the lattice constant near the Al2O3/GaN interface, leading to the improved bond termination and bonding order configuration along the interface. (C) 2018 The Japan Society of Applied PhysicsIOP Publishing2018-12engjournal articleVoRhttp://hdl.handle.net/2115/72143https://doi.org/10.7567/APEX.11.1241021882-0778Applied Physics Express (APEX)1112124102https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/72143/1/Hashizume_2018_Appl._Phys._Express_11_124102.pdfapplication/pdf1.57 MB2018-12