2024-03-28T17:58:06Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/731372022-11-17T02:08:08Zhdl_2115_20045hdl_2115_139引き下げ法によるLi2B4O7単結晶の育成とその評価Growth of Li2B4O7 Single Crystals by a Pulling-Down Method北川, 高郎Kitagawa, Takao1000040198990樋口, 幹雄Higuchi, Mikio小平, 紘平Kodaira, Koheiopen accessCreative Commons Attribution-NoDerivatives 4.0 InternationalLi2B4O7Single crystalPulling-down methodBubble-free, transparent Li2B4O7 single crystals were grown by a newly developed pulling-down method. The use of a two-zone vertical furnace with a Pt-crucible realized a relatively steep temperature gradient of about 50°C/cm around the growth interface and a moderate gradient of about 13°C/cm below the interface, contributing to prevent grown crystals from cracking. Even at a pulling-down rate of 0.75mm/h, which is higher than that in the Czochralski growth, the formation of bubbles was effectively suppressed at a rotation rate of 25rpm. Any crystals grown along [110] direction involved no low-angle grain boundaries, but twinning was occasionally recognized. The dislocation density in the initial part of the crystal growth was found to be about 5×103/cm2 from an etch pit pattern, while X-ray topography of a vertical cross section revealed that the number of dislocation lines decreased as the growth proceeded.Ceramic Society of Japan日本セラミックス協会1997-07-01jpnjournal articleVoRhttp://hdl.handle.net/2115/73137https://doi.org/10.2109/jcersj.105.6160914-54001882-1022AN10040326Journal of the Ceramic Society of Japan日本セラミックス協会学術論文誌1051223616619https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/73137/1/JCS105.616-619.pdfapplication/pdf2.82 MB1997-07-01