2024-03-28T10:32:41Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/786102022-11-17T02:08:08Zhdl_2115_20057hdl_2115_148Magnetic properties and spin-orbit-torque-induced magnetization switching in Ta/MnGa grown on Cr and NiAl buffer layers1000040590899Yamanouchi, MichihikoNguyen Viet BaoShimohashi, FumiakiJono, KoheyInoue, MasakiUemura, Tetsuyametadata only accessCopyright 2019 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.Creative Commons Attribution 4.0 International427We investigate the magnetic properties and spin-orbit-torque-induced (SOT-induced) magnetization switching in Ta/MnGa/Cr and Ta/MnGa/NiAl structures. Out-of-plane hysteresis loops for the Ta/MnGa/Cr (NiAl) structures are skewed (square). In-plane currents I are applied to Hall devices made of structures exposed to in-plane magnetic fields H-in along the channel direction. Clear asymmetric magnetization switching with respect to the polarity of I and H-in is detected for the Ta/MnGa/NiAl device. Similar asymmetric magnetization switching is observed for the Ta/MnGa/Cr device, although the magnetization is partially switched regardless of the polarity of I and Hin. These results suggest that an in-plane magnetization component opposite to Hin is present in the Cr-buffer structure and that the formation of such a component is suppressed in the NiAl-buffer structure. (C) 2019 Author(s).American Institute of Physics (AIP)2019-12-01engjournal articleNAhttp://hdl.handle.net/2115/78610https://doi.org/10.1063/1.5129300AIP Advances912125245