2024-03-29T08:47:34Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/813382022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Spin-orbit torque induced magnetization switching for an ultrathin MnGa/Co2MnSi bilayerJono, KoheyShimohashi, Fumiaki1000040590899Yamanouchi, Michihiko1000020344476Uemura, Tetsuyametadata only accessTetsuya Uemura, AIP Advances 11, 025205 (2021); licensed under a Creative Commons Attribution (CC BY) license.Creative Commons Attribution 4.0 International540We investigated spin-orbit torque (SOT) induced magnetization switching and SOT efficiency for Mn1.8Ga1.0 (MnGa) single layers and MnGa/Co2MnSi (CMS) bilayers. Magnetization measurements showed that ultrathin MnGa and CMS were antiferromagnetically coupled to each other with clear perpendicular magnetization. SOT-induced magnetization switching was observed for both MnGa/CMS/Ta and MnGa/Ta stacks, and the switching current was reduced by a half in the MnGa/CMS/Ta stack. Examination of SOT acting on the domain walls revealed that the effective magnetic field originating from the SOT was approximately five times stronger in the MnGa/CMS/Ta stack than in the MnGa/Ta stack. These results indicate that the MnGa/CMS bilayer structure is effective in enhancing the efficiency of SOT generation.American Institute of Physics (AIP)2021-02-01engjournal articleNAhttp://hdl.handle.net/2115/81338https://doi.org/10.1063/5.0032732AIP Advances112025205