2024-03-28T16:35:27Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/833172022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatmentShimauchi, MichihitoMiwa, KazukiToguchi, Masachika1000050343009Sato, Taketomo1000060212263Motohisa, Junichimetadata only access©2021 The Japan Society of Applied PhysicsGaNElectrochemial etchingnanowire540We attempted to fabricate GaN nanowires by electrodeless photo-assisted electrochemical (PEC) etching and successive alkaline solution treatment. The sample consisting of n(+)-doped and unintentionally doped GaN grown on a GaN substrate was selectively etched using a Ti mask in a mixed solution of K2S2O8 and KOH under UV light radiation. This specific layer structure required a relatively concentrated KOH solution for etching. The PEC etching resulted in the formation of a tapered cone structure of GaN with its top diameter determined by the mask size. Successive KOH treatment after PEC etching yielded GaN nanowires with diameters of about 220 nm.IOP Publishing2021-11-01engjournal articleNAhttp://hdl.handle.net/2115/83317https://doi.org/10.35848/1882-0786/ac2d451882-0778AA12295133Applied Physics Express (APEX)1411111003