2024-03-29T05:58:24Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/837192022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam1000030212400Akazawa, MasamichiKamoshida, RyoMurai, ShuntaKachi, Tetsu1000020213374Uedono, Akiraopen access©2021 The Japan Society of Applied Physics540Mg ions were implanted into Si-doped (5 x 10(17) cm(-3)) n-GaN at a dose of 1.5 x 10(11) or 1.5 x 10(12) cm(-2). MOS diodes were used to characterize the implanted GaN after 300 degrees C annealing for 3 h and after additional 500 degrees C annealing for 3 min. Although capacitance-voltage (C-V) characteristics varied with the dosage, the effects of acceptor-like defects induced by ion implantation were observed in the C-V characteristics independently of dosage and annealing temperature. A defect level at approximately 0.25 eV below the conduction band edge was detected electrically. By positron annihilation spectroscopy, its origin was identified as a divacancy consisting of Ga and N vacancies. It was found that its density compared with that of as-implanted GaN decreased with 300 degrees C annealing, and further increased with 500 degrees C annealing. This phenomenon was explained on the basis of the difference between the diffusion barriers of possible point defects.IOP Publishing2021-01-01engjournal articleAMhttp://hdl.handle.net/2115/83719https://doi.org/10.35848/1347-4065/abcf080021-4922Japanese Journal of Applied Physics (JJAP)601016502https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/83719/1/JJAP_RP_MOSPAS_HUSCAP.pdfapplication/pdf558.93 KB2021-01-01