2024-03-29T01:27:21Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/838312022-11-17T02:08:08Zhdl_2115_20071hdl_2115_183Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiCYang, SubingTokunaga, SakikoKondo, MinakoNakagawa, Yuki1000010241564Shibayama, Tamakiopen access© 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 InternationalImplantationElectron backscattering diffraction (EBSD)Raman spectroscopyResidual strain433Residual strain in silicon carbide (SiC) greatly affects its physical and chemical properties and thus the performance of SiC-based devices. Herein, the detailed strain distribution in selected-area He+ ion-irradiated 4H-SiC was evaluated using the non-destructive techniques of electron backscattering diffraction and confocal Raman microscopy (CRM). In addition to the strain introduced in the irradiated area, excessive strain induced by irradiation-induced swelling also extended into the surrounding substrate. Furthermore, great compressive strain was concentrated around the interface between the irradiated and unirradiated areas. In the strain-introduced substrate, an A(1)(LO)/A(1)(LOPC) peak variation was detected by CRM, suggesting a variation of the carrier density.Elsevier2020-01-15engjournal articleAMhttp://hdl.handle.net/2115/83831https://doi.org/10.1016/j.apsusc.2019.1440510169-4332Applied surface science500144051https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/83831/1/revised%20Manuscript.pdfapplication/pdf1.47 MB2020-01-15