2024-03-29T11:12:00Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/893302023-05-24T17:14:33Zhdl_2115_20057hdl_2115_148Antiferroelectric-to-ferroelectric phase transition in hexagonal rare-earth iron oxidesChen, BinjieHasegawa, Tetsuya1000080372530Ohta, Hiromichi1000050784617Katayama, Tsukasaopen access430Ferroic oxides often exhibit exotic behavior, accompanied by phase transitions. Hexagonal rare-earth iron oxides (h-RFeO3), a promising multiferroic system, have been reported to exhibit ferroelectricity (FE) when the lattice parameter ratio (c/a) exceeds 1.93 and antiferroelectricity (AFE) when c/a is equal to 1.89. Although the AFE-FE phase boundary in the h-RFeO3 systems is assumed to exist at c/a approximate to 1.9, the phase transition has not been observed so far due to the lack of samples with such a c/a ratio. In this study, we show the AFE-FE phase transition in h-RFeO3 films, where R = Dy. We fabricated h-DyFeO3 films with c/a ratios of 1.90-1.92 by controlling the film thicknesses. The h-DyFeO3 films with a c/a ratio of 1.91 exhibited AFE at temperatures below 200 K and FE at temperatures up to 300 K. The phase transition temperature (T-p) was modulated by the c/a ratio. The films also underwent an AFE-FE phase transition upon adjusting the frequency of the voltage applied at the T-p. We discuss the possible origin of the AFE-FE phase transition from the viewpoint of the migration length of the FE domain wall motion.Royal Society of Chemistry2022-04-14engjournal articleAMhttp://hdl.handle.net/2115/89330https://doi.org/10.1039/d1tc05944k2050-7526Journal of materials chemistry C101456215626https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/89330/1/Revised_Paper.pdfapplication/pdf1.07 MB2022-04-14