2024-03-28T19:47:44Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/101952022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum CircuitsNakamura, TatsuyaAbe, YujiKasai, SeiyaHasegawa, HidekiHashizume, Tamotsu549A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates(WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed.Institute of PhysicsJournal Articleapplication/pdfhttp://hdl.handle.net/2115/10195https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/10195/1/NPMSnakamuraRev.pdf1742-65881742-6596Journal of Physics: Conference Series381041072006enginfo:doi/10.1088/1742-6596/38/1/026author