2024-03-28T22:19:37Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/145932022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical processSato, TaketomoKasai, SeiyaHasegawa, HidekiNanometer-sized Schottky contactGaAsInPI–V characteristicsC–V characteristicsElectrochemical process549The electrical properties of nanometer-sized Schottky contacts which were successfully formed on n-GaAs and n-InP substrates by a combination of an electrochemical process and an electron-beam (EB) lithography, were characterized both experimentally and theoretically. The detailed I–V measurements using a conductive AFM system showed nonlinear log I–V characteristics with large n value in range of 1.2–2.0 which cannot be explained by a standard 1D thermionic emission model. A computer simulation showed that this nonlinear characteristics can be explained by a new 3D thermionic emission model where Fermi-level pinning on the surrounding free surface modifies the potential distribution underneath the nano-contact. Calculation of C–V characteristics showed an extremely small change of the depletion layer width with bias due to the environmental Fermi-level pinning. On the other hand, it was also found that Fermi-level pinning at the metal–semiconductor interface itself is greatly reduced, resulting in a strong dependence of barrier height on the metal workfunction.Elsevier Science B.V.Journal Articleapplication/pdfhttp://hdl.handle.net/2115/14593https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/14593/1/ASS175-176-2001.pdf0169-4332Applied Surface Science175-1761-21811862001enginfo:doi/10.1016/S0169-4332(01)00059-9author