2024-03-29T02:18:19Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/330922022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical ProcessSato, TaketomoKasai, SeiyaOkada, HiroshiHasegawa, Hidekinanometer-sized Schottky contactI-V characteristicscomputer simulationelectrochemical processSEMAFMconductive probeGaAsInP549The current transport characteristics of nanometer-sized Schottky contacts were investigated from theoretical and experimental viewpoints. A theoretical calculation of the three dimensional (3D) potential distributions showed that the potential shape underneath the nano-Schottky contacts was considerably modified by the surface Fermi level pinning on the air exposed free surfaces, producing a saddle point in the potential. The curl ent-voltage (I-V) curves were strongly influenced by this saddle point potential and resulted in nonlinear log I-V characteristics. Experimentally, the Pt nano-particles were selectively formed using the in situ electrochemical process on n-type GaAs and n-type InP substrates patterned using electron-beam (EB) lithography. Their I-V measurements were carried out using an atomic force microscopy (AFM) system equipped with a conductive probe. The log I-V curves of the nano-Schottky contacts showed nonlinear characteristics with large n values of 1.96 for n-GaAs and 1.27 for n-InP and could be very well explained by the theoretical I-V curves considering the "environmental" Fermi level pinning.Japan Society of Applied PhysicsJournal Articleapplication/pdfhttp://hdl.handle.net/2115/33092https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/33092/1/JJAP1~39-7B.pdf0021-4922AA10457675Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers397460946152000-07enginfo:doi/10.1143/JJAP.39.4609Copyright © 2000 The Japan Society of Applied Physicsauthor