2024-03-29T01:55:12Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/338712022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous NanostructuresSato, TaketomoMizohata, Akinori549A photoelectrochemical (PEC) process was developed to remove the irregular top layer from InP porous nanostructures. After anodic formation of a nanopore array, the PEC process repeated in the same electrolyte under illumination. The etching rate of the pore surfaces was strongly associated with their structural properties, being greater in the irregular top layer. The irregular top layer was completely removed by monitoring and controlling the anodic photocurrents in the ramped bias mode.The Electrochemical SocietyJournal Articleapplication/pdfhttp://hdl.handle.net/2115/33871https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/33871/1/ESSL11_H111.pdf1099-0062AA1124254XElectrochemical and Solid-State Letters115H111H1132008-02-20enginfo:doi/10.1149/1.2844216© The Electrochemical Society, Inc. 2008. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochem. Solid-State Lett., Volume 11, Issue 5, pp. H111-H113 (2008).publisher