2024-03-28T11:59:27Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/432042022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctionsUemura, TetsuyaHarada, MasanobuMatsuda, Ken-ichiYamamoto, Masafumicobalt alloyselectric field effectsferromagnetic materialsgallium arsenideIII-V semiconductorsiron alloysmanganese alloyssemiconductor heterojunctionssemiconductor-metal boundariessilicon alloysspin-orbit interactionstunnelling magnetoresistance427A strong voltage-dependent tunneling anisotropic magnetoresistance (TAMR) effect was observed in a fully epitaxial Co2MnSi/n-GaAs junction and a Co50Fe50/n-GaAs junction. Angular dependence of the tunnel resistance showed uniaxial-type anisotropic tunnel resistance between the [110] and [11ˉ0] directions in the (001) plane. The voltage at which the TAMR effect was suppressed was close to that at which the differential conductance reached a minimum in both samples, suggesting that the strength and/or the sign of the internal electric field at the Co2MnSi/n-GaAs and Co50Fe50/n-GaAs junctions could be related to the voltage-dependent TAMR effect through spin-orbit interaction.American Institute of PhysicsJournal Articleapplication/pdfhttp://hdl.handle.net/2115/43204https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/43204/1/APL96-25_252106.pdf0003-6951Applied Physics Letters96252521062010-06-21enginfo:doi/10.1063/1.3456558Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 252106 (2010) and may be found at https://dx.doi.org/10.1063/1.3456558publisher