2024-03-28T13:10:21Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/502302022-11-17T02:08:08Zhdl_2115_20039hdl_2115_116Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodepositionTakahashi, MakotoTodorobaru, MakotoWakita, KoichiUosaki, Koheicadmium compoundsII-VI semiconductorssemiconductor epitaxial layerssemiconductor growthpulsed laser depositionelectrodepositsliquid phase epitaxial growthphotoluminescenceatomic force microscopyexcitonssurface statessurface structure431Highly oriented CdTe(111) films of high-crystalline quality were grown on a Si(111) substrate by pulsed-light-assisted electrodeposition at room temperature. Strong photoluminescence peaks due to the bound exciton recombination were observed for the electrodeposited CdTe films, confirming the high quality of the films prepared by the present method. Atomic-force microscopy measurements showed an atomically ordered arrangement and demonstrated the epitaxial growth of the CdTe films.American Institute of PhysicsJournal Articleapplication/pdfhttp://hdl.handle.net/2115/50230https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/50230/1/APL80-12_2117-2119.pdf0003-6951Applied Physics Letters8012211721192002-03-25enginfo:doi/10.1063/1.1463718Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 80, 2117 (2002) and may be found at https://dx.doi.org/10.1063/1.1463718publisher