2024-03-28T09:34:20Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/513822022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurementMatys, M.Adamowicz, B.Hashizume, T.aluminium compoundsgallium compoundsIII-V semiconductorsinterface statesMIS structuresphotocapacitancevalence bandswide band gap semiconductors421We developed a method for determining of the deep donor-like interface state density distribution D_[it](E) at the insulator/wide bandgap semiconductor interface in metal/insulator/semiconductor structures from the measurements of photocapacitance vs. ultraviolet light intensity C_[L](Φ). From the comparison of theoretical and experimental C_[L](Φ) curves we obtained the continuous donor D_[it](E) in the energy range between 0.15 eV and 1 eV from the valence band top for a metal/Al2O3/n-GaN device. In addition, the acceptor-like interface state D_[it](E) in the upper part of the bandgap was determined from the capacitance-voltage method.American Institute of PhysicsJournal Articleapplication/pdfhttp://hdl.handle.net/2115/51382https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/51382/1/APL101-23_231608.pdf0003-6951Applied Physics Letters101232316082012-12-03enginfo:doi/10.1063/1.4769815Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 231608 (2012) and may be found at https://dx.doi.org/10.1063/1.4769815publisher