2024-03-29T04:54:00Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/58742022-11-17T02:08:08Zhdl_2115_20045hdl_2115_139Site-selective silicon adatom desorption using femtosecond laser pulse pairs and scanning tunneling microscopyFutaba, D. N.Morita, R.Yamashita, M.Tomiyama, S.Shigekawa, H.431.8We performed an experimental study of silicon adatom desorption from the Si(111)-737 surface using femtosecond laser pulse pair excitation with 80 fs pulse duration, 800 nm center wavelength, 300 mW average power, and a 100 MHz repetition rate. Using scanning tunneling microscopy, we directly recorded the desorption characteristics at each delay setting for each of the four adatom binding sites. The study revealed a preferential dependence between the delay time and the adatom sites within a 66.6–1000 fs delay range.American Institute of PhysicsJournal Articleapplication/pdfhttp://hdl.handle.net/2115/5874https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/5874/1/APL83-12.pdf0003-6951APPLIED PHYSICS LETTERS8312233323352003-09-22enginfo:doi/10.1063/1.1613361Copyright © 2003 American Institute of Physicspublisher