2024-03-29T14:58:26Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/680252022-11-17T02:08:08Zhdl_2115_20053hdl_2115_145Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structuresIshizaka, FumiyaHiraya, YoshihiroTomioka, KatsuhiroMotohisa, JunichiFukui, Takashi540We report on the selective-area growth and characterization of wurtzite (WZ) InP/AlGaP core–multishell nanowires. Quantum well (QW) structures were fabricated in AlGaP multishells by changing the alloy composition. Transmission electron microscopy revealed that the AlGaP multishells were grown with a WZ structure on the side of the WZ InP core. The lattice constants of the WZ InP core and WZ AlGaP shell were determined by X-ray diffraction. Cathodoluminescence studies showed that the WZ AlGaP QW with an Al composition of 20% exhibited green emissions at 2.37 eV. These results open the possibility of fabricating green light-emitting diodes using WZ AlGaP-based materials.IOP PublishingJournal Articleapplication/pdfhttp://hdl.handle.net/2115/68025https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/68025/1/161026_WZAlGaP_JJAPRC_manuscript.pdf0021-4922Japanese Journal of Applied Physics5610103112017-01enginfo:doi/10.7567/JJAP.56.010311© 2017 The Japan Society of Applied Physicsauthor