2024-03-28T23:00:50Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/682992022-11-17T02:08:08Zhdl_2115_20057hdl_2115_148Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3Sanchela, Anup V.Onozato, TakakiFeng, BinIkuhara, YuichiOhta, Hiromichi428The exact intrinsic carrier effective mass m* of a well-studied transparent oxide semiconductor BaSnO3 is unknown because the reported m* values are scattered from 0.06m(0) to 3.7m(0). This paper identifies the intrinsic m* of BaSnO3, m* = 0.40 +/- 0.01m(0), by the thermopower modulation clarification method and determines the threshold of the degenerate/nondegenerate semiconductor. At the threshold, the thermopower values of both the La-doped BaSnO3 and BaSnO3 thin-film transistor structures are 240 mu V K-1, the bulk carrier concentration is 1.4 x 10(19) cm(-3), and the two-dimensional sheet carrier concentration is 1.8 x 10(12) cm(-2). When the Fermi energy E-F is located above the parabolic shaped conduction band bottom, the mobility is rather high. In contrast, E-F below the threshold exhibits a very low carrier mobility, most likely because the tail states suppress the carrier mobility. The present results are useful to further develop BaSnO3-based oxide electronics.American Physical Society (APS)Journal Articleapplication/pdfhttp://hdl.handle.net/2115/68299https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/68299/1/PhysRevMaterials.1.034603.pdf2475-9953Physical Review Materials13346032017-08-04enginfo:doi/10.1103/PhysRevMaterials.1.034603© 2017 American Physical Societypublisher