2024-03-29T15:07:17Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/766372022-11-17T02:08:08Zhdl_2115_20059hdl_2115_151Smooth epitaxial copper film on sapphire surface suitable for high quality graphene growthMa, TaoAriga, HirokoTakakusagi, SatoruAsakura, KiyotakaEpitaxial growthCu(111) filmsCrystal orientationRoughnessChemical vapor depositionDefects431Graphene, a two-dimensional material, can be grown on a metal substrate using chemical vapor deposition - this growth process is notably influenced by the crystal orientation and the roughness of the substrate surface. We prepared epitaxial Cu(111) films on sapphire substrates using thermal evaporation at various substrate temperatures and studied their crystal orientation and roughness. The well crystallized Cu(111) film with a smooth surface was obtained when the substrate was maintained at 473 K during the deposition. High quality graphene with few intrinsic defects was grown on this Cu film.ElsevierJournal Articleapplication/pdfhttp://hdl.handle.net/2115/76637https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/76637/1/elsivier1025TAO1.pdf0040-6090Thin solid films64612162018-01-31enginfo:doi/10.1016/j.tsf.2017.11.009© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/author